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10E30 TA1043A 5950B SB310 HMC43 5950B 2SK14 158M000
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  inchange semiconductor isc product specification isc silicon npn power transistor 2SD1576 description high collector-base breakdown voltage- : v (br)cbo = 1500v (min.) high switching speed wide area of safe operation applications designed for horizontal defle ction output applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1500 v v ces collector- emitter voltage 1500 v v ceo collector-emitter voltage 700 v v ebo emitter-base voltage 6 v i c collector current- continuous 2 a i cm collector current-peak 6 a i bm base current-peak 2.5 a collector power dissipation @ t a =25 2.5 p c collector power dissipation @ t c =25 80 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD1576 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce (sat) collector-emitter saturation voltage i c = 2a; i b = 1a b 5.0 v v be (sat) base-emitter saturation voltage i c = 2a; i b = 1a b 1.5 v v (br)ebo emitter-base breakdown voltage i e = 1ma; i c = 0 6 v i cbo collector cutoff current v cb = 750v; i e = 0 v cb = 1500v; i e = 0 50 1.0 a ma h fe dc current gain i c = 2a; v ce = 5v 2 f t current-gain?bandwidth product i c = 0.5a; v ce = 10v; f test = 0.5mhz 2 mhz switching times t stg storage time 9.0 s t f fall time i c = 2.5a , i b = 1.1a; l b = 10 h 1.0 s isc website www.iscsemi.cn 2


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